ERA38-04 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

ERA38-04 - ERA38-06
HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 400 - 600V
CURRENT: 0.5 A
Features
! Low leakage
! _{Low forward voltage drop}
! High current capability
! Easily cleaned with alcohol,Isopropanol
and sim ilar s olvents
! ^{The plas tic material carries U/L recognition 94V-0}
Mechanical Data
! Cas e:DO-41,m olded plas tic
! Terminals: Axial lead ,solderable per
!
MIL- STD-202,Method 208
! Polarity: Color band denotes cathode
! Weight: 0.012 ounces,0.34 gram s
! ^{Mounting position: Any}
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol ERA38 - 04
ERA38 - 05
ERA38 - 06
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
V_RMS
V_DC
Maximum average forw ard rectif ied current
9.5mm lead length,
@T_A=75
I_{F (AV)}
Peak forw ard surge current
8.3ms single half -sine-w ave
I_{F SM}
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 0.5A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
400
280
400
500
350
500
0.5
10.0
2.50
5.0
50.0
50
20
60
- 55 ----- + 150
- 55 ----- + 150
600
420
600
15
Unit
V
V
V
A
A
V
ns
pF
/W
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