ERA32-01 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

ERA32-01—ERA32-02
1.0A Axial Leaded Rectifier
Features
· Low cost
· _{D iffus ed junction}
· _{Low leakage}
· Low forw ard voltage drop
· H igh current capability
· _{Eas ily cleaned w ith Freon,Alcohol,Is opropanol}
and s im ilar s olvents
· The plas tic m aterial carries U/L recognition 94V -0
Mechanical Data
· C as e:JED EC D O-41,m olded plas tic
· Term inals : Axial lead ,s olderable per
MIL- STD -202,Method 208
· Polarity: C olor band denotes cathode
· Weight: 0.012 ounces ,0.34 gram s
· Mounting pos ition: Any
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ERA32 - 01
ERA32 - 02
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
V_RMS
V_DC
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
100
200
70
140
100
200
1.0
40.0
0.92
5.0
50.0
50
20
60
- 55 ----- + 150
- 55 ----- + 150
1 of 2
UNITS
V
V
V
A
A
V
ns
pF
/W