ERA15-01 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

ERA15-01 – ERA15-10
PLASTIC SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100 - 1000 V
CURRENT: 1.0 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: D O - 4 1
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.35 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol ^{ERA15-01 ERA15-02} ERA15-04 ERA15 -06 ERA15-08 ERA15-10 _Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
100
VR
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
70
140
280
420
560
700
V
Average Rectified Output Current
(Note 1)
@T_A = 75°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
40
A
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
1.0
V
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
5.0
50
µA
Typical Junction Capacitance (Note 2)
Cj
15
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
50
K/W
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
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