ER3AB Datasheet, PDF (1/2 Pages) Micro Commercial Components – 3 Amp Super Fast Recovery Silicon Rectifier 50 to 600 Volts

ER3AB - ER3JB
SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 600V
CURRENT: 3.0 A
Features
! Low cost
! Low leakage
! Low forward voltage drop
! High current capability
! Easily cleaned with alcohol,Isopropanol
! ^{and similar solvents}
! The plastic material carries U/L recognition 94V-0
Mechanical Data
! Case: SMB/DO-214AA, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! _{Weight: 0.093 grams (approx.)}
B
SMB(DO-214AA)
Dim Min Max
A
3.30 3.94
A
C
B
4.06 4.70
C
1.91 2.21
D
0.15 0.31
D
E
5.00 5.59
G
0.10 0.20
J
H
0.76 1.52
H
G
E
J
2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol _{ER3AB ER3BB ER3CB ER3DB ER3EB ER3GB ER3JB} Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
50
V_RMS
35
V_DC
50
Maximum average forw ard rectified current
@T_A=75
Peak forw ard surge current
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 3.0A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=125
I_R
Maximum reverse recovery time (Note 1)
t_rr
Typical junction capacitance (Note 2)
C_J
Typical thermal resistance
(Note 3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
100 150 200 300 400 600
V
70
105 140 210 280 420
V
100 150 200 300 400 600
V
3.0
A
100
0.95
1.25
5.0
300
35
95
40
- 55 ----- + 150
- 55 ----- + 150
A
1.7
V
A
ns
pF
/W
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