ER101 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SUPER FAST RECTIFIER

ER101 - ER106
SUPER FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 100 - 600V
CURRENT: 1.0 A
Features
! ^{Low leakage}
! Low forward voltage drop
! _{High current capability}
! ^{Easily cleaned with alcohol,Isopropanol}
and similar solvents
! The plastic material carries U/L recognition 94V-0
Mechanical Data
! Case: D O - 4 1 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! ^{Marking: Type Number}
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol ER101 ER102 ER103 ER104
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
100
200
300
400
V_RMS
70
140
210
280
V_DC
100
200
300
400
Maximumaverage forw ard rectified current
9.5mm lead length,
@T_A=75
IF(AV)
1.0
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
I_FSM
30.0
Maximuminstantaneous forw ard voltage
@ 1.0A
V_F
0.95
1.25
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance
(Note 3)
Operating junction temperature range
Storage temperature range
I_R
t_rr
C_J
R_θJA
T_J
T_STG
5.0
150.0
35
22
50
- 55 ----- + 150
- 55 ----- + 150
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
ER106 Unit
600
V
420
V
600
V
A
A
1.7
V
A
ns
pF
̼ͤ
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