EM1Y Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

EM1Y - EM1C
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100 - 1000V
CURRENT: 1.0 A
Features
! Low cost
! _{Diffused junction}
! Low leakage
! Low forward voltage drop
! ^{High current capability}
! Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
! _{The plastic material carries U/L recognition 94V-0}
Mechanical Data
! Case: D O - 4 1 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
Symbol
V_RRM
V_RMS
V_DC
EM1Y
100
70
100
I_F(AV)
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0 A
I_FSM
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note1)
C_J
Typical thermal resistance
(Note2)
Operating junction temperature range
R_θJA
T_J
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
EM1Z
200
140
200
EM1
400
280
400
EM1A
600
420
600
EM1B EM1C
800 1000
560 700
800 1000
1.0
45.0
0.97
5.0
50.0
15
50
- 55---- +150
- 55---- + 150
Unit
V
V
V
A
A
V
A
pF
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