EM01Z Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

EM01Z - EM01A
PLASTIC SILICON RECTIFIER DIODES
VOLTAGE RANGE: 200 - 600V
CURRENT: 1.0 A
Features
! Low cost
! Diffused junction
Low leakage
! _{Low forward voltage drop}
! High current capability
! ^{Easily cleaned with Freon,Alcohol,Isopropanol}
! ^{and similar solvents}
The plastic material carries U/L recognition 94V-0
Mechanical Data
! Case: D O - 4 1 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
EM01Z
EM01
Maximum recurrent peak reverse voltage
V_RRM
200
Maximum RMS voltage
V_RMS
140
Maximum DC blocking voltage
V_DC
200
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0 A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note1)
C_J
Typical thermal resistance
(Note2)
Operating junction temperature range
R_θJA
T_J
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
400
280
400
1.0
45.0
0.97
5.0
50.0
15
50
-55----+150
-55----+150
EM01A
600
420
600
Unit
V
V
V
A
A
V
A
pF
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