EC8FS6 Datasheet, PDF (1/1 Pages) Nihon Inter Electronics Corporation – FRD - Low Power Loss, High Efficiency

EC8FS6
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 600V
CURRENT: 0.8 A
Features
! Miniature Size,Surface Mount Device
! Ultra-Fast Recove
! Low Forward Voltage Drop
! _{Low Power Loss, High Efficiency}
! _{High Surge Capabilit}
! Packaged in 12mm Tape and Reel
! Not Rolli ngDuring Assembly
Mechanical Data
! Case: SMB/DO-214AA, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! _{Weight: 0.093 grams (approx.)}
B
A
J
H
G
E
SMB(DO-214AA)
Dim Min Max
A
3.30 3.94
C
B
4.06 4.70
C
1.91 2.21
D
0.15 0.31
D
E
5.00 5.59
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
RepetitivePeak Reverse Voltage
Average Rectified Forward Current 50Hz Half Sine Wave Resistive Load
R.M.S.Forward Current
Ta=25° C ^{* 1}
Ta=35° C ^{* 2}
Surge Forward Current 50Hz Half Sine Wave,Icycle,Non-repetitive
Operating Junction Temperature Range
Storage Temperature Range
Electrical Characteristics @ TA = 25°C unless otherwise specified
Symbol
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
Limits Unit
600
V
0.65
0.8
A
1.256
A
20
A
-40 to +150 °C
-40 to +150 °C
Characteristic
Peak Reverse Current Tj= 25 °C, V RM = V RRM
Peak Forward Voltage _{Tj= 25 °C, I FM = 0.8A}
I FM = 1A, -di/dt= 50A/ µ s, Ta
Reverse Recovery Time _{I F=I R=10mA , Ta= 25 ° C}
Thermal Resistance
*1
Junction to Ambient _*2
= 2 5°C
Sym bol M in.
IRM
-
VFM
-
trr
-
-
-
Typ
-
-
-
-
-
Max.
20
1.32
80
0.4
157
108
U n it
µA
V
ns
µs
°C /W