EC10DS2 Datasheet, PDF (1/1 Pages) Nihon Inter Electronics Corporation – Low Forward Voltage Drop Diode

EC10DS2
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 200V
CURRENT: 1.0 A
Features
! Miniature Size,Surface Mount Device
! ^{High Surge Capability}
! Low Forward Voltage Drop
! Low Reverse Leakage Current
Mechanical Data
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
B
A
J
H
G
E
SMA(DO-214AC)
Dim Min Max
C
A
2.29 2.92
B
4.00 4.60
C
1.27 1.63
D
D
0.15 0.31
E
4.80 5.59
G
0.10 0.20
H
0.76 1.52
J
2.01 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
RepetitivePeak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Forward Current 50Hz Half Sine Wave Resistive Load
R.M.S.Forward Current
Surge Forward Current 50Hz Half Sine Wave,Icycle,Non-repetitive
Operating Junction Temperature Range
Storage Temperature Range
Smboly
VRRM
VRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
Limits Unit
200
V
400
V
0.74
1.0
A
1.57
A
25
A
-40 to +150 °C
-40 to +150 °C
Characteristic
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Junction to Ambient
Smboly _Min Typ Max _Unit
IRM
-
VFM
-
-
10
µA
-
1.1
V
Rth(j-a)
-
-
-
-
157
108
°C /W