DR200 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

DR200 - DR210
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50V - 1000V
CURRENT: 2.0 A
Features
! ^{High current capability}
! High surge current capability
! High reliability
! Low reverse current
! Low forward voltage drop
Mechanical Data
! ^{Case : DO-15 Molded plastic}
! Epoxy : UL94V-O rate flame retardant
! Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
! Polarity : Color band denotes cathode end
! Mounting position : Any
! _{Weight : 0.465 gram}
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics _{TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol _{DR200 DR201 DR202 DR204 DR206 DR208 DR210}
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 50 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
VRRM
VRMS
VDC
IF
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
2.0
IFSM
75
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 2.0 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
1.0
5.0
50
75
20
- 65 to + 175
- 65 to + 175
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Unit
V
V
V
A
A
V
µA
µA
pF
°C/W
°C
°C
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