DB101S Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER

DB101S-DB107S
GLASS PASSIVATED BRIDGE RCTIFIER
VOLTAGE RANGE: 50 -1000V
CURRENT: 1.0 A
Features
! Ideal for Printed Circuit Board
! _{Reliable low cost construction utilizing}
molded plastic technique
! High surge current capability
! Plastic Package - UL Flammability
Classification 94V-0
Mechanical Data
! Case: Molded plastic body
! Terminals:Plated leads solderable per
MIL-STD-750, Method 2026
! _{Polarity : Polarity symbols marked on case}
! Mounting Position: Any
! Weight:0.02 ounce, 0.4 grams
.205(5.2)
.195(5.0)
+
.047(1.20)
.040(1.02)
DBS
.130(0.33)
.120(0.22)
.335(8.51)
.320(8.13) 45
.013(0.33)
.0088(0.22)
.404(10.3)
.386(9.80)
.255(6.5)
.245(6.2)
.060(1.53)
.040(1.02)
.013(0.33)
.003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TA=40*
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage drop
per birdge element at 1.0A
Maximum DC reverse current TA=25*
at rated DC blocking voltage TA=125*
Operating temperature range
storage temperature range
Symbol
DB
101S
DB DB DB
102S 103S 104S
DB DB DB
105S 106S 107S
Unit
VRRM
50
100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700 V
VDC
50
100 200 400 600 800 1000 V
IF(AV)
1.0
A
IFSM
50
A
VF
1.1
V
IR
10
µA
500
µA
TJ
-55 to +150
°C
TSTG
-55 to +150
°C
NOTES:DBS for surface mount package.
1 of 2
www.sunmate.tw