BYW52 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Mesa Rectifiers

BYW52-BYW56
2.0A Axial Leaded Silicon Rectifier
Features
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
· _{Case: DO-15 Sintered glass case}
· _{Terminals: Plated axial leads, solderable per}
MIL-STD-750, Method 2026
· Polarity: Color band denotes cathode end
· Mounting Position: Any
· Weight: approx. 369 mg
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
¾
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Peak forward surge current
t_p = 10 ms, half sinewave
Repetitive peak forward current
Average forward current
ϕ = 180 °
Pulse avalanche peak power
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
t_p = 20 µs half sine wave,
T_j = 175 °C
Test condition
I_F = 1 A
V_R = V_RRM
V_R = V_RRM, T_j = 100 °C
I_R = 100 µA, t_p/T = 0.01,
t_p = 0.3 ms
V_R = 4 V, f = 1 MHz
I_F = 0.5 A, I_R = 1 A, i_R = 0.25 A
I_F = 1 A, di/dt = 5 A/µs, V_R = 50 V
I_F = 1 A, di/dt = 5 A/µs
Part
BYW52
BYW53
BYW54
BYW55
BYW56
Symbol
V_F
I_R
I_R
V_(BR)
C_D
t_rr
t_rr
Q_rr
Symbol
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
V_R = V_RRM
I_FSM
I_FRM
I_FAV
P_R
Value
200
400
600
800
1000
50
12
2
1000
Min
Typ.
Max
0.9
1.0
0.1
1
5
10
1600
18
4
4
200
Unit
V
V
V
V
V
A
A
A
W
Unit
V
µA
µA
V
pF
µs
µs
nC
1 of 3