BYV95A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE FAST RECOVERY RECTIFIER DIODES

VOLTAGE RANGE: 200 - 1000V
CURRENT: 1.5 A
Features
! ^{High current capability}
! High surge current capability
! High reliability
! Low reverse current
! ^{Low forward voltage drop}
! Fast switching for high efficiency
Mechanical Data
! ^{Case : DO-15 Molded plastic}
! ^{Epoxy : UL94V-O rate flame retardant}
! Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
! ^{Polarity : Color band denotes cathode end}
! Mounting position : Any
! _{Weight : 0.465 gram}
BYV95A - BYV96E
FAST RECOVERY RECTIFIER DIODES
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol _{BYV95A BYV95B BYV95C BYV96D BYV96E Unit}
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
800 1000
Maximum RMS voltage
VRMS
140 280 420 560 700
Maximum DC Blocking Voltage
VDC
200 400 600 800 1000
Min. Avalanche Breakdown Voltage @ 100 µA
Maximum Average Forward Rectified Current
Lead Length 10 mm. ; Ttp = 65 °C
Peak Forward Surge Current single half sine wave
superimposed on rated load
Maximum Forward Voltage at IF = 3.0 Amps.
VBR(min. )
300
500
700
900 1100
I F(AV)
1.5
IFSM
35
VF
1.6
Maximum DC Reverse Current
TJ = 25 °C
IR
5.0
at Rated DC Blocking Voltage
TJ = 165 °C
150
Maximum Reverse Recovery Time ( Note 1 )
Trr
150
200
Typical Thermal Resistance (Note 2)
RθJA
50
Junction Temperature Range
TJ
175
Storage Temperature Range
TSTG
- 65 to + 175
Notes :
(1) Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Volts
Volts
Volts
Volts
Amps.
Amps.
Volts
µA
ns
°_C/W
°C
°C
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