BYV36A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIERS

BYV36A - BYV36E
FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 200 - 1000V
CURRENT: 1.6A
Features
! Low leakage
! _{Low forward voltage drop}
! High current capability
! Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
Mechanical Data
! Case : DO-15, Molded plastic
! ^{Epoxy : UL94V-O rate flame retardant}
! ^{Lead : Axial lead solderable per MIL-STD-202,}
Method 208 guaranteed
! Polarity : Color band denotes cathode end
! ^{Mounting position : Any}
! ^{Weight : 0.465 gram}
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol _{BYV 36A BYV 36B BYV36C BYV 36D} BYV 36E
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
V _{R MS}
V_DC
Maximum average forw ard rectif ied current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
I_{F (AV)}
10ms single half-sine-w ave
I_{F SM}
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
R_{θ J A}
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
200
140
200
400
600
800
1000
V
280
420
560
700
V
200
600
800
1000
V
1.6
A
30.0
A
1.35
1.45
V
5.0
A
100.0
100
150
ns
18
pF
45
/W
-55 ---- + 150
-55 ---- + 150
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