BYV12 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Fast Silicon Mesa Rectifiers

BYV12 - BYV16
FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 100 - 1000V
CURRENT: 1.5 A
Features
! ^{Low leakage}
! ^{Low forward voltage drop}
! High current capability
! _{Easily cleaned with Freon,Alcohol,Isopropanol}
and similar solvents
! The plastic material carries U/L recognition 94V-0
Mechanical Data
! ^{Case:DO-15 Molded Plastic}
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Marking: Type Number
! Weight: 0.4 grams (approx.)
! ^{Mounting Position: Any}
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol BYV12 BYV13 BYV14 BYV15 BYV16
Unit
Maximum recurrent peak reverse voltage
V_RRM
100
400
600
800
1000
V
Maximum RMS voltage
V_RMS
70
280
420
560
700
V
Maximum DC blocking voltage
V_DC
100
400
600
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
1.5
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
I_FSM
60.0
A
Maximum instantaneous forw ard voltage
@ 1.5 A
V_F
1.3
V
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
5.0
100.0
A
Maximum reverse recovery time (Note1)
t_rr
300
ns
Typical junction capacitance (Note2)
C_J
18
pF
Typical thermal resistance (Note3)
R_θJA
45
̼ͤ
Operating junction temperature range
T_J
- 55---- +150
Storage temperature range
T_STG
- 55---- +150
NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
1 of 2
www.sunmate.tw