BYT56A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY ECTIFIERS

BYT56A - BYT56M
FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
! Highcurrent capability
! ^{High surge current capability}
! ^{High reliability}
! ^{Low reverse current}
! Low forward voltage drop
! ^{Fast switching for high efficiency}
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-201AD
Dim
Min
Max
A
25.40
¾
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol BYT56A _{BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M} Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
50
V_RMS
35
V_DC
50
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 3.0A
I_F(AV)
I_FSM
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
R_θJA
T_J
T_STG
100
200
400
600
800 1000
V
70
140
280
420
560
700
V
100
200
400
600
800 1000
V
3.0
A
150.0
A
1.4
V
10.0
150.0
A
100
ns
75
50
pF
30
̼ͤ
- 55 ---- + 150
- 55 ---- + 150
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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