BYT52A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIERS

VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.4 A
Features
! Diffused junction
! _{Low leakage}
! _{Low forward voltage drop}
! _{High current capability}
! Easily cleaned with Freon, Alcohol,Isopropanol and
similar solvents
Mechanical Data
! Case : DO-15 Molded plastic
! Epoxy : UL94V-O rate flame retardant
! Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
! Polarity : Color band denotes cathode end
! _{Mounting position : Any}
! _{Weight : 0.465 gram}
BYT52A - BYT52M
FAST RECOVERY RECTIFIER DIODES
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@ T_A =7 5
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T_J=125
Maximum instantaneous f orw ard voltage
(
@ 1.0A
Maximum reverse current
@ T_A =2 5
at rated DC blocking voltage @T_A=100
V_RRM
50
V _{R MS}
35
V_DC
50
I_{F (A V)}
I_{F S M}
V_F
I_R
100
200
400
600
70
140
280
420
10
200
400
600
1.4
5 0 .0
1.3
5.0
1 0 0 .0
800
1000 V
560
700
V
800
1000 V
A
A
V
A
Maximum reverse recovery time (Note1)
t_rr
200
ns
Typical junction capacitance (Note2)
C_J
18
pF
Typical thermal resistance
(Note3)
R_qJA
45
/W
Operating junction temperature range
T_J
-55 ---- + 150
Storage temperature range
T_STG
-55 ---- + 150
N OTE:1. Meas ured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance f rom junction to am bient.
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