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BYT42A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIER
BYT42A - BYT42M
FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.25 A
Features
! Low leakage
! Low forward voltage drop
! High current capability
! Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
! The plastic material carries U/L recognition 94V-0
Mechanical Data
! Case:D O - 1 5 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.40 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol BYT 42A BYT42B BYT42D BYT 42G BYT42J BYT42K BYT42M Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
50
100
VRMS
35
70
VDC
50
100
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
Peak forw ard surge current
IF(AV)
8.3ms single half-sine-w ave
IFSM
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 1.25 A
VF
200
400
600 800 1000
V
140 280 420 560 700
V
200
400
600 800 1000
V
1.25
A
40.0
A
1.4
V
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance (Note2)
CJ
Typical thermal resistance (Note3)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
5.0
100.0
150
18
45
- 55---- +150
- 55---- +150
A
200
ns
pF
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