BYM26A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SUPER FAST RECTIFIER

BYM26A - BYM26E
SUPER FAST RECTIFIER DIODES
VOLTAGE RANGE: 200 - 1000V
CURRENT: 2.3 A
Features
! Low forward voltage drop
! High current capability
! ^{Easily cleaned with alcohol,Isopropanol}
and similar solvents
! The plastic material carries U/L recognition 94V-0
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-201AD
Dim
Min
Max
A
25.40
¾
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol BYM26A BYM26B BYM26C BYM26D BYM26E Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM
200
V_RMS
140
V_DC
200
I_F(AV)
10 ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 2.0A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
Operating junction temperature range
R_θJA
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
400
600
800
1000
V
280
420
560
700
V
400
600
800
1000
V
2.3
A
45.0
A
2.65
V
10.0
A
150.0
30
75
ns
85
75
pF
75
/W
- 55 ----- + 150
- 55 ----- + 150
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