BYM11-50 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Surface Mount Glass Passivated Junction Fast Switching Rectifier

BYM11-50 - BYM11-1000
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
! Superectifier structure for high reliability
condition
! _{Patented glass-plastic encapsulation technique}
Ideal for automated placement
! Fast switching for high efficiency
! Low leakage current
! High forward surge capability
Mechanical Data
! Case: LL41(DO-213AB), Plastic
! ^{Terminals: Solderable per MIL-STD-202,}
Method 208
! Polarity: Cathode band
! ^{Mounting Position: Any}
! ^{Approx Weight: 0.25 grams}
A
B
C
LL41//DO-213AB
Dim
Min
Max
A
4.80
5.20
B
2.40
2.60
C
0.55 Nominal
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol ^BYM
11-50
BYM
BYM
BYM
BYM
BYM
11-100 11-200 11-400 11-600 11-800
BYM
11-1000 ^Unit
Maximum repetitive peak reverse voltage V_RRM
50
Maximum RMS voltage
V_RMS
35
Maximum DC blocking voltage
V_DC
50
Maximum average forward rectified
current at T_T = 55 °C
I_F(AV)
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
I_FSM
Maximum full load reverse current, full
cycle average at T_A = 55 °C
Operating junction and storage
temperature range
I_R(AV)
T_J, T_STG
Maximum instantaneous
forward voltage at 1.0 A
V_F
Maximum DC reverse current at rated DC
blocking voltage
T_A= 25 °C
T_A= 125 °C
I_R
Maximum reverse at I_F = 0.5 A, I_R = 1.0 A,
recovery time
I_rr = 0.25 A
rr^t
Typical junction
capacitance
at 4.0 V, 1 MHz
C_J
100
200
400
600
800
1000
V
70
140
280
420
560
700
V
100
200
400
600
800
1000
V
1.0
A
30
A
50
µA
- 65 to + 175
°C
1.3
V
5.0
µA
50
150
250
500
ns
15
pF
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