BYG24D Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST AVALANCHE RECTIFIERS

BYG24D - BYG24J
FAST AVALANCHE RECTIFIERS DIODES
VOLTAGE RANGE: 200 - 600V
CURRENT: 1.5 A
Features
! Glass passivated junction
! Low profile package
! Ideal for automated placement
! Low reverse current
! Soft recovery characteristics
! _{Fast reverse recovery time}
Mechanical Data
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
B
A
J
H
G
E
SMA(DO-214AC)
Dim Min Max
C
A
2.29 2.92
B
4.00 4.60
C
1.27 1.63
D
D
0.15 0.31
E
4.80 5.59
G
0.10 0.20
H
0.76 1.52
J
2.01 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Minimum Breakdown Voltage at I_R = 100 μA
Maximum Average Forward Current
Peak Forward Surge Current 10 ms single half
sine wave superimposed on rated load
Maximum Instantaneous
at I_F = 1 A, Tj = 25 °C
Forward Voltage ⁽¹⁾
at I_F = 1.5 A, Tj = 25 °C
Maximum DC Reverse Current
at V_R = V_RRM, Tj = 25 °C
at V_R = V_RRM, Tj = 100 °C
Maximum Reverse Recovery Time( I_F = 0.5A, I_R = 1.0A, Irr = 0.25A)
Typical Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient ⁽²⁾
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I_(BR)R = 1A, Tj = 25 °C
Operating Junction and Storage Temperature Range
SYMBOL
V_RRM
V_(BR)
I_F(AV)
BYG24D
200
200
BYG24G
400
400
1.5
BYG24J
600
600
I_FSM
30
V_F
I_R
I_R(H)
Trr
R_Ó¨JC
R_Ó¨JA
1.15
1.25
1.0
10
140
25
150
E_R
20
T_J, T_STG
- 55 to + 150
Notes :
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Mounted on epoxy-glass hard tissue 35 µm * 17 mm² cooper area per electrode.
UNIT
V
V
A
A
V
μA
ns
°C/W
°C/W
mJ
°C
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