BYG10D Datasheet, PDF (1/2 Pages) Vishay Siliconix – Standard Avalanche SMD Rectifier

BYG10D - BYG10M
SURFACE MOUNT SILICON MESA (SMD) RECTIFIER DIODE
VOLTAGE RANGE: 200 - 1000V
CURRENT: 1.5 A
Features
D Controlled avalanche characteristics
D Glass passivated junction
D Low reverse current
D High surge current capability
D Wave and reflow solderable
Mechanical Data
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
B
A
J
H
G
E
SMA(DO-214AC)
Dim Min Max
C
A
2.29 2.92
B
4.00 4.60
C
1.27 1.63
D
D
0.15 0.31
E
4.80 5.59
G
0.10 0.20
H
0.76 1.52
J
2.01 2.62
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
t_p=10ms,
half sinewave
I_(BR)R=1A, T_j=25°C
Type
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
Symbol
V_R=V_RRM
V_R=V_RRM
V_R=V_RRM
V_R=V_RRM
V_R=V_RRM
I_FSM
Value
200
400
600
800
1000
30
I_FAV
T_j=T_stg
1.5
–55...+150
E_R
20
Unit
V
V
V
V
V
A
A
°C
mJ
Maximum Thermal ResistancejT = 25C
Parameter
Test Conditions
Junction lead
Junction ambient
T_L=const.
mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm² 35mm Cu
mounted on Al–oxid–ceramic (Al₂O₃), 50mm² 35mm Cu
Electrical CharacteristicsjT = 25C
Symbol
R_thJL
R_thJA
R_thJA
R_thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Parameter
Forward voltage
Reverse current
Reverse recovery time
Test Conditions
I_F=1A
I_F=1.5A
V_R=V_RRM
V_R=V_RRM, T_j=100°C
I_F=0.5A, I_R=1A, i_R=0.25A
Type Symbol Min Typ Max Unit
V_F
1.1 V
V_F
1.15 V
I_R
1 mA
I_R
10 mA
t_rr
4 ms
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