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BR305 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE SILICON BRIDGE RECTIFIER
BR305-BR310
BRIDGE RECTIFIERS DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 3.0 A
Features
! Diffused junction
! High current capability
! High case dielectric strength
! High surge current capability
! Ideal for printed circuit board application
! Plastic material has underwriters laboratory
flammability classification 94V-O
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated leads solderable per
! MIL-STD-202, Method 208
! Polarity: Marked on body
BR-3
.213(5.4)
.193(4.9)
.035(0.9) DIA.
.028(0.7) TYP.
(.71590.1)MIN.
HOLE FOR
NO. 6 SCREW
.620(15.7)
.580(14.7)
AC
.445(11.3) .620(15.7)
.405(10.3) .580(14.7)
AC
+
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
BR BR BR BR BR
Symbol 305 31
32
34
36
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
50 100 200 400 600
35 70 140 280 420
Maximum DC blocking voltage
Average rectified output current (note1)at TC = 50OC
Non-repetitive Peak forward surge current
8.3ms single half sine wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage drop per leg
at 1.5A
Maximum DC reverse current
at rated DC blocking voltage per leg
TC = 25OC
TC = 100OC
Rating for fusing (t<8.3ms)(note 2)
VDC
50 100 200 400 600
IO
3.0
IFSM
50
VF
1.2
10
IR
1.0
I2t
10
Typical junction capacitance(note3)
Typical thermal resistance per leg (note 4)
Operating junction and storage temperature range
Cj
RθJC
TJ ,TSTG
55
25
-65 to +125
Notes: 1. Mounted on metal chassis
2. Non-repetitive, for t>1ms and <8.3ms
3. Measured at 1.0MHz and applied reverse voltage of 4.0V.DC
4. Thermal resistance junction to case per element
BR BR
38 310 Unit
800 1000 V
560 700 V
800 1000 V
A
A
V
uA
mA
A2s
pF
K/W
OC
1 of 2
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