BAW56 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAW56
DUAL SURFACE MOUNT SWITCHING DIODE
Features
! Fast Switching Speed
! ^{Surface Mount Package Ideally Suited for}
Automated Insertion
For General Purpose Switching Applications
! _{Two Diode Elements Connected}
! in a Common Anode Configuration
Mechanical Data
! Case:SOT-23
! ^{Marking: KJG}
! ^{Weight: 0.008 grams (approximate)}
A
BC
TOP VIEW
E
D
G
H
K
M
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_FSM
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T ,T
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage
Symbol
Min
V_(BR)R
75
Forward Voltage
V_F
⎯
Reverse Current
Total Capacitance
Reverse Recovery Time
I_R
⎯
C_T
⎯
t_rr
⎯
1 of 2
Value
100
75
53
300
2.0
1.0
Value
350
357
-65 to +150
Unit
V
V
V
mA
A
Unit
mW
°C/W
°C
Max
⎯
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
V
µA
µA
µA
nA
pF
ns
Test Condition
I_R = 2.5µA
I_F = 1.0mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
V_R = 75V
V_R = 75V, T_J = +150°C
V_R = 25V, T_J = +150°C
V_R = 20V
V_R = 0, f = 1.0MHz
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100Ω
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