BAW27 Datasheet, PDF (1/1 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

Features
· _{Silicon Epitaxial Planar Diode}
· Low forward voltage drop
· High forward current capability
· Lead (Pb)-free component
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
· _{Case: DO35 Glass case}
· Weight: approx. 125 mg
· Cathode Band Color: black
· ^{Packaging Codes/Options:}
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
BAW27
300mA Axial Leaded Smalll Sighal Switching Diode
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Parameter
Test condition
Symbol
Repetitive peak reverse voltage
V_RRM
Reverse voltage
V_R
Peak forward surge current
t_p = 1 µs
I_FSM
Forward continuous current
I_F
Average forward current
V_R = 0
I_FAV
Power dissipation
l = 4 mm, T_L = 45 °C
P_tot
l = 4 mm, T_L ≤ 25 °C
P_tot
Parameter
Test condition
Symbol
Min
Forward voltage
I_F = 10 mA
V_F
I_F = 50 mA
V_F
I_F = 200 mA
V_F
I_F = 400 mA
V_F
Reverse current
V_R = 60 V
I_R
V_R = 60 V, T_j = 100 °C
I_R
Breakdown voltage
I_R = 5 µA, t_p/T = 0.01, t_p = 0.3 ms V_(BR)
75
Diode capacitance
V_R = 0, f = 1 MHz, V_HF = 50 mV
C_D
Reverse recovery time
I_F = I_R = 10 to 100 mA,
t_rr
i_R = 0.1 x I_R
Value
75
60
4
600
300
440
500
Typ.
670
800
950
1120
Max
750
850
1000
1250
100
50
4
6
Unit
V
V
A
mA
mA
mW
mW
Unit
mV
mV
mV
mV
nA
µA
V
pF
ns
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