BAV99W Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV99W
SURFACE MOUNT FAST SWITCHING DIODE
L
A
Features
· Fast Switching Speed
· Ultra-small Surface Mount Package
· For General Purpose Switching Applications
· High Conductance
Mechanical Data
! Case: SOT-323, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Weight: 0.006 grams (approx.)
! Mounting Position: Any
! Marking: JG
B
TOP VIEW
C
E
D
H
K
J
G
TOP VIEW
M
SOT-323
Dim
Min
Max
A
0.30
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
—
0.10
K
0.90
1.10
L
0.25
—
M
0.05
0.15
All Dimensions in mm
Maximum Ratings @ T_A = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
Symbol
V_RM
VRRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
P_d
R_qJA
T_j , T_STG
Value
100
75
53
300
150
2.0
1.0
200
625
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 2)
Symbol
Min
V(BR)R
75
Forward Voltage
V_F
¾
Reverse Current
Total Capacitance
Reverse Recovery Time
I_R
¾
C_T
¾
t_rr
¾
Max
¾
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
V
mA
mA
mA
nA
pF
ns
Test Condition
IR= 2.5mA
IF = 1.0mA
IF = 10mA
I_F = 50mA
IF = 150mA
V_R = 75V
V_R = 75V, T_j = 150°C
VR = 25V, Tj = 150°C
V_R = 20V
VR = 0, f = 1.0MHz
I_F = I_R = 10mA,
Irr = 0.1 x IR, RL = 100W
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