BAV99 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV99
DUAL SURFACE MOUNT SWITCHING DIODE
Features
· Fast Switching Speed
· Surface Mount Package Ideally Suited for
Automatic Insertion
A
· For General Purpose Switching Applications
· High Conductance
TOP VIEW
BC
Mechanical Data
E
D
G
· Case: SOT-23, Molded Plastic
H
· Marking: KJE
· Weight: 0.008 grams (approx.)
K
M
J
L
D
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
Symbol
V_RM
VRRM
VRWM
V_R
V_R(RMS)
I_FM
I_FSM
P_d
R_qJA
T_j , T_STG
BAV99
100
75
53
300
2.0
1.0
350
357
-65 to +150
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M
0.85 0.80
a
0°
8°
All Dimensions in mm
Unit
V
V
V
mA
A
mW
°C/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Forward Voltage (Note 2)
VF
¾
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
IR
¾
CT
¾
trr
¾
Max
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
mA
mA
mA
nA
pF
ns
Test Condition
I_F = 1.0mA
I_F = 10mA
IF = 50mA
I_F = 150mA
VR = 75V
V_R = 75V, T_j = 150°C
VR = 25V, Tj = 150°C
V_R = 20V
V_R = 0, f = 1.0MHz
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100W
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