BAV74 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV74
DUAL SURFACE MOUNT SWITCHING DIODE
Features
z For high-speed switching appilication.
z Common cathode.
Mechanical Data
z Case:SOT23
z Weight: 0.008 grams (approximate)
z _{Marking: JA}
A
BC
TOP VIEW
E
D
G
H
K
M
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Parameter
Diode reverse voltage
Peak Reverse Voltage
Forward Current
Surge forward current, t=1μs
Total Power Dissipation T_s=35℃
Junction temperature
Storage temperature range
Symbol
V_R
V_RM
I_F
I_FS
P_tot
T_j
T_stg
Limits
50
50
200
4.5
250
150
-65-+150
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V_(BR)R
I_R
V_F
C_D
t _rr
Test conditions
I_R= 100μA
V_R=50V
V_R=50V T_A=150℃
I_F=100mA
V_R=0V f=1MHz
I_F=I_R=10mA
I_R=1mA R_L=100Ω
MIN
50
Unit
V
V
mA
A
mW
℃
℃
MAX
0.1
100
1
UNIT
V
μA
V
2.0
pF
4
nS
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