BAV70W Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV70W
DUAL SURFACE MOUNT SWITCHING DIODE
Features
· Fast Switching Speed
· Ultra-Small Surface Mount Package
· For General Purpose Switching Applications
· High Conductance
H
Mechanical Data
D
G
SOD-323
Dim Min Max
A
2.30 2.70
J
B
1.60 1.80
C
1.20 1.40
D
1.05 Typical
· Case: SOT-323, Molded Plastic
· Case Material - UL Flammability Rating
Classification 94V-0
· Terminals: Solderable per MIL-STD-202,
Method 208
· Weight: 0.006 grams (approx.)
A
B
C
E
E
0.25 0.35
G
0.20 0.40
H
0.10 0.15
J
0.05 Typical
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
Symbol
VRM
V_RRM
V_RWM
V_R
VR(RMS)
I_FM
IO
IFSM
P_d
RqJA
Tj , TSTG
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 1)
Symbol
Min
VBR(R)
75
Forward Voltage (Note 1)
VFM
¾
Peak Reverse Current (Note 1)
IRM
¾
Junction Capacitance
Reverse Recovery Time
Cj
¾
trr
¾
Note: 1. Short duration test pulse used to minimize self-heating effect.
BAV70W
100
75
53
300
150
2.0
1.0
200
625
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Max
¾
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
V
mA
mA
mA
nA
pF
ns
Test Condition
IR = 100mA
I_F = 1.0mA
IF = 10mA
IF = 50mA
I_F = 150mA
VR = 75V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
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