BAV20WS Datasheet, PDF (1/2 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – Silicon Ep itaxial Planar Diode

BAV19WS - BAV21WS
SURFACE MOUNT FAST SWITCHING DIODE
Features
! ^{Fast Switching Speed}
! Surface Mount Package Ideally Suited for
Automatic Insertion
A
! For General Purpose Switching Applications
! High Conductance
C
SOD-323
Dim Min
Max
Mechanical Data
! Case: SOD-323, Molded Plastic
D
A
2.30 2.70
B
B
1.75 1.95
C
1.15 1.35
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
E
D
0.25 0.35
G
E
0.05 0.15
! Polarity: Cathode Band
G
0.70 0.95
! Weight: 0.004 grams (approx.)
! Marking: A3
H
0.30
—
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Repetitive Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
Symbol
V_RRM
V_RWM
V_R
VR(RMS)
I_FM
I_O
I_FSM
I_FRM
P_d
R_qJA
T_j , T_STG
H
BAV19WS
120
100
71
BAV20WS
200
150
106
400
200
2.5
0.5
625
200
625
-65 to +150
BAV21WS
250
200
141
Unit
V
V
V
mA
mA
A
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol
Min
Max
Reverse Breakdown Voltage (Note 2) BAV19WS
120
BAV20WS
V(BR)R
200
¾
BAV21WS
250
Forward Voltage (Note 2)
V_FM
¾
1.0
1.25
Peak Reverse Current
@ Rated DC Blocking Voltage
I_RM
100
¾
15
Total Capacitance
Ct
¾
5.0
Reverse Recovery Time
t_rr
¾
50
Unit
V
V
NA
mA
pF
ns
Test Condition
I_R = 100mA
I_F = 100mA
I_F = 200mA
T_j = 25°C
T_j = 100°C
VR = 0, f = 1.0MHz
I_F = I_R = 30mA,
I_rr = 0.1 x I_R, R_L = 100W
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