BAT48 Datasheet, PDF (1/2 Pages) General Semiconductor – Schottky Diodes

BAT48
350mA Axial Leaded Schottky Barrier Diode
Features
· For general purpose applications
· These diodes feature very low turn-on voltage and
fast switching. These devices are protected by a
PN junction guard ring against excessive voltage,
such as electrostatic discharges
· This diode is also available in the Mini-MELF case
with type designations LL48
· Pb / RoHS Free
Mechanical Data
· Case: DO-35 Glass Case
· Weight: approx. 0.13g
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Parameter
Symbol
Repetitive Peak Reverse Voltage
V_RRM
Continuous Forward Current
I_F
Repetitive Peak Forward Current at tp < 1s,
I_FRM
Forward Surge Current at tp < 10 ms,
I_FSM
Power Dissipation ,Ta = 65 °C
P_D
Thermal Resistance Junction to Ambient Air
R_θJA
Junction Temperature
T_J
Ambient Operating Temperature Range
Ta
Storage temperature range
T_S
Parameter
Symbol
Test Condition
Reverse Breakdown Voltage
Reverse Current
Pulse Test tp <300µs , δ <2%
Forward Voltage
Pulse Test tp <300µs , δ <2%
Diode Capacitance
V_(BR)R
I_R
V_F
Cd
I_R = 100 µA (pulsed)
V_R = 10 V
V_R = 20 V
V_R = 40 V
I_F = 1mA
I_F = 10mA
I_F = 30mA
I_F = 100mA
I_F = 500mA
V_R = 1V, f = 1MHz
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Value
40
350⁽¹⁾
1⁽¹⁾
7.5⁽¹⁾
330⁽¹⁾
300⁽¹⁾
125
-65 to + 125
-65 to + 150
Min
Typ
Max
40
-
-
-
-
2
-
-
5
-
-
25
-
-
0.30
-
-
0.40
-
-
0.50
-
-
0.75
-
-
0.90
-
12
-
Unit
V
mA
A
A
mW
°C/W
°C
°C
°C
Unit
V
µA
V
pF
1 of 2