 English |
|
|
|
|
|
|
|
| BAS21 Datasheet, PDF (1/1 Pages) Rectron Semiconductor – SURFACE MOUNT DIODE | |||
| |||
|
BAS19 - BAS21
SURFACE MOUNT SWITCHING DIODE
Features
z Silicon planar epitaxial high speed diode
z For switching and general purpose applications
Mechanical Data
z Case:SOT-23
z Weight: 0.008 grams (approximate)
A
BC
TOP VIEW
E
D
G
H
K
M
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Parameter
Test Conditions
Type Symbol Value
Working peak reverse voltage
=DC Blocking voltage
BAS19 VRWM
100
BAS20 =VR
150
BAS21
200
Repetitive peak reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Forward current
Power dissipation
Junction and storage
temperature range
t=1ms
t=1s
tp<0.3ms
TCase=TL (8mm from Case)
=Tamb
TCase=TL (8mm from Case)
=Tamb
Tj = 25_C
BAS19 VRRM
120
BAS20 VRRM
200
BAS21 VRRM
250
IFSM
2.5
IFSM
0.5
IFRM
625
IFAV
200
IF
400
Ptot
250
Tj=Tstg â55...+150
Unit
V
V
V
V
V
V
A
A
mA
mA
mA
mW
°C
Parameter
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
Diode capacitance
Dynamic forward resistance
Test Conditions
IF=100mA
IF=200mA
VR=VRmax
VR=VRmax, Tj= 150°C
IR=100mA, tp<0.3ms
IR=100mA
IR=100mA, VR<275V
W IF=IR=10mA, RL=100 ,
W VR=6V to IR=1mA. RL=100
VR=0, f= 1MHz
IF=10mA
Type Symbol Min Typ Max Unit
VF
VF
IR
IR
BAS19 V(BR)R 120
BAS20 V(BR)R 200
BAS21 V(BR)R 250
trr
1.0 V
1.25 V
100 nA
100 mA
V
V
V
50 ns
CD
rf
5 pF
5
W
1 of 1
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese