BAS16HT1G Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Small Signal Diode

Features
BAS16HT1G
200mA Surface Mount Switching Diode
C
H
B
A
M
K
J
L
Mechanical Data
· Case Molded Plastic
SOD-323
Dim Min Max
A
0.25 0.35
B
1.20 1.40
C
2.30 2.70
H
1.60 1.80
J
0.00 0.10
K
1.0 1.1
L
0.20 0.40
M
0.10 0.15
α
0°
8°
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Symbol
Parameter
Value
Units
V_RRM
I_F(AV)
I_FSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
85
V
200
mA
600
mA
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature
-65 to +150
°C
-55 to +150
°C
Symbol
Parameter
Test Conditions
Min.
Max. Units
V_R
Breakdown Voltage
V_F
Forward Voltage
I_R
Reverse Leakage
C_T
Total Capacitance
t_rr
Reverse Recovery Time
I_R = 5.0µA
85
I_F = 1.0mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
V_R = 75V
V_R = 25V, T_A = 150°C
V_R = 75V, T_A = 150°C
V_R = 0, f = 1.0MHz
I_F = I_R = 10mA, I_RR = 1.0mA,
R_L = 100Ω
V
715
mV
855
mV
1.0
V
1.25
V
1.0
µA
30
µA
50
µA
2.0
pF
6.0
ns
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
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