BAQ35 Datasheet, PDF (1/2 Pages) SUNMATE electronic Co., LTD – SMALL SIGNAL SWITCHING DIODES

BAQ33 - BAQ35
SMALL SIGNAL SWITCHING DIODES
Features
! _{Silicon Planar Diodes}
! Very low reverse current
Mechanical Data
! Case: SOD-80/LL34, Glass
! ^{Terminals: Solderable per MIL-STD-202,}
! ^{Method 208}
! Polarity: Cathode Band
! ^{Weight: 0.05 grams (approx.)}
C
B
A
LL34/ SOD-80
Dim
Min
Max
A
3.30
3.70
B
1.30
1.60
C
0.28
0.50
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Parameter
Reverse voltage
Test condition
Peak forward surge current
Forward current
t_p = 1 µs
Part
BAQ33
BAQ34
BAQ35
Thermal Characteristics T_amb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Test condition
on PC board
50 mm x 50 mm x 1.6 mm
Storage temperature range
Symbol
V_R
V_R
V_R
I_FSM
I_F
Symbol
R_thJA
T_j
T_stg
Value
30
60
125
2
200
Value
500
175
- 65 to + 175
Unit
V
V
V
A
mA
Unit
K/W
°C
°C
Electrical Characteristics T_amb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Test condition
Part
Symbol
Min
Typ.
Max
Unit
I_F = 100 mA
V_F
1
V
E ≤ 300 lx, rated V_R
I_R
1
3
nA
E ≤ 300 lx, rated V_R, T_j = 125 °C
I_R
0.5
μA
E ≤ 300 lx, V_R = 15 V
BAQ33
I_R
0.5
1
nA
E ≤ 300l x, V_R = 30 V
BAQ34
I_R
0.5
1
nA
E ≤ 300 lx, V_R = 60 V
BAQ35
I_R
0.5
1
nA
I_R = 5 µA, t_p/T = 0.01, t_p= 0.3 ms BAQ33 V_(BR)
40
V
I_R = 5 µA, t_p/T = 0.01, t_p = 0.3 ms BAQ34 V_(BR)
70
V
BAQ35
V_(BR)
140
V
V_R = 0, f = 1 MHz
C_D
3
pF
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