8A05 Datasheet, PDF (1/2 Pages) Daesan Electronics Corp. – CURRENT 8.0 Amperes VOLTAGE 50 TO 100 VOLTS

8A05 - 8A10
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 8 .0 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! ^{Case: R-6,}
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Mounting Position: Any
! Marking: Type Number
! Weight: 2.1 grams (approx.)
A
B
A
C
D
R-6
Dim
Min
Max
A
25.4
—
B
8.6
9.1
C
1.2
1.3
All Dimensions in mm
Maximum Ratings and Electrical Characteristics _{TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol 8A05 8A1 8A2 8A4 8A6 8A8 8A10 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current
(Note 1)
@T_A = 50°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F= 8.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Typical Junction Capacitance (Note 2)
Cj
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
Operating Temperature Range
Tj
Storage Temperature Range
TSTG
100
200
400
600
800 1000
V
70
140 280 420 560 700
V
8.0
A
600
1.0
10
100
150
80
10
-50 to +150
-50 to +150
A
V
µA
pF
°C/W
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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