1SS88 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for CATV Balanced Mixer

1SS88
SILICON EPITAXIAL PLANAR DIODES
Features
! _{Low capacitance. (C = 0.97 pF max)}
! _{High reliability with glass seal.}
Mechanical Data
! Case: DO-35, glass case
! Polarity: Color band denotes cathode
! Weight: 0.004 ounces, 0.13 grams
DO-35(GLASS)
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.165 (4.2)
MAX
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Reverse voltage
Peak forward current
Average rectified current
Power dissipation
Junction temperature
Storage temperature
VR
IFM
IO
Pd
Tj
Tstg
Symbol
Value
10
35
15
150
100
−55 to +100
Unit
V
mA
mA
mW
°C
°C
Characteristic
Symbol Min
Typ
Forward voltage
VF1
365
—
VF2
520
—
Reverse current
IR1
—
—
IR2
—
—
Capacitance
Capacitance deviation ^*3
Forward voltage deviation ^*3
C
∆C
∆VF1
—
—
—
—
—
—
ESD-Capability ^*1
∆VF2
—
—
—
30
—
Notes: 1. Failure criterion ; IR ≥ 50 µA at VR = 10 V
2. Each group shall unify a multiple of 4 diodes.
3. Not applied to taping-type products.
Max
430
600
0.2
10
0.97
0.1
10
10
—
Unit
mV
µA
pF
pF
mV
V
Test Condition
IF = 1 mA
IF = 10 mA
VR = 2 V
VR = 10 V
VR = 0 V, f = 1 MHz
VR = 0 V, f = 1 MHz
IF = 2.5 mA
IF = 10 mA
C = 200 pF, R = 0 Ω , Both forward
and reverse direction 1 pulse.
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