1SS86 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for UHF TV Tuner Mixer

1SS86
SILICON EPITAXIAL PLANAR DIODES
Features
! ^{Low capacitance. (C = 0.85 pF max)}
! High reliability with glass seal.
Mechanical Data
! Case: DO-35, glass case
! _{Polarity: Color band denotes cathode}
! Weight: 0.004 ounces, 0.13 grams
DO-35(GLASS)
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.165 (4.2)
MAX
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse voltage
Average rectified current
Power dissipation
Junction temperature
Storage temperature
Symbol
Value
Unit
V_R
3
V
I_O
30
mA
Pd
150
mW
Tj
100
°C
Tstg
−55 to +100
°C
Characteristic
Symbol Min
Typ
Max
Unit
Test Condition
Forward current
I_F
Reverse current
I_R
8
—
—
mA VF = 0.5 V
—
—
50
µA VR = 0.5 V
Reverse voltage
V_R
3.0
—
—
V
I_R = 1 mA
Capacitance
C
ESD-Capability *
—
—
—
0.85
pF V_R = 0.5 V, f = 1 MHz
30
—
—
V C = 200 pF, R = 0 Ω, Both forward and
reverse direction 1 pulse.
Note: Failure criterion ; I_R > 50 µA at V_R = 0.5 V
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