1SS181 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

1SS181
100mA Surface Mount Switching Diode
Features
· Low forward voltage
V_F(3)=0.92V(typ).
· Fast switching.
· Fast reverse recovery time:t_rr=1.6ns(typ)
A
BC
G
H
K
M
Mechanical Data
· Case: SOT-23
J
DF
L
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
F
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013 0.10
K
0.903 1.10
L
0.45
0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol
Limits
Unit
Non-Repetitive Peak Reverse Voltage
V_RM
85
V
DC Reverse Voltage
Forward current(max)
V_R
80
V
I_FM
300
mA
Forward Output current
I_o
100
mA
Power Dissipation
P_d
150
mW
Operating Junction Temperature Range
T_j
125
℃
Storage Temperature Range
Characteristic
T_STG
-55 to +125
℃
Symbol Min Typ _{MAX UNIT} Test Condition
Reverse Breakdown Voltage
V_(BR)R
80 -
-
V
I_R= 100μA
Forward Voltage
0.61
I_F=1mA
V_F
-
0.74
V
I_F=10mA
0.92 1.2
I_F=100mA
Reverse Leakage Current
I_R
Junction Capacitance
C_j
Reverse Recovery Time
t_rr
0.1
-
0.5
-
2.2 4.0
-
1.6 4.0
1 of 2
μA
V_R=30V
V_R=80V
pF ^VR^=0V,f=1.0MHz
ns
I_F=I_R=10mAI_rr=0.1*I_R