1SS178 Datasheet, PDF (1/1 Pages) EIC discrete Semiconductors – HIGH SPEED SWITCHING DIODE

Features
· High switching speed: max. 4 ns
· Continuous reverse voltage:max. 80 V
· Repetitive peak reverse voltage:max. 90 V
· Pb / RoHS Free
Mechanical Data
· _{Case: DO-34 Glass Case}
· Weight: approx. 0.093g
1SS178
100mA Axial Leaded High Speed Switching Diode
0.55
max
1.6
max
25.4 min
3.04
max
25.4 min
DO-34
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Average Forward Current
Maximum Peak Forward Current
Maximum Power Dissipation
Maximum Non-repetitive Peak Forward Current
Parameter
Reverse Current
Forward Voltage
Capacitance between terminals
Reverse Recovery Time
Symbol
I_R
V_F
C_T
Trr
Symbol
V_RRM
V_RM
I_F
I_FM
P_D
I_FSM
Test Condition
V_R = 80 V
I_F = 100 mA
f = 1MHz ; V_R = 0.5 V
I_F = 10 mA , V_R = 6 V
R_L = 50 Ω
Value
90
80
100
300
300
1.0
Min.
-
-
-
Typ.
-
-
-
Max.
0.5
1.2
3.0
-
-
4.0
.
Unit
V
V
mA
mA
mW
A
Unit
μA
V
pF
ns
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