1SS165 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SCHOTTKY BARRIER DIODES

1SS165
15mA Axial Leaded Schottky Barrier Diodes
Features
· Low forward voltage
· High breakdown voltage
· Low diode capacitance.
· Pb / RoHS Free
A
B
A
Mechanical Data
· Case: DO-35 Glass Case
· Weight: approx. 0.11g
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Parameter
Symbol
Value
Reverse Voltage
Average Rectified Current
Power Dissipation
Junction Temperature
Storage temperature range
Parameter
Symbol
V_R
I_o
P_D
T_J
T_stg
Test Condition
10
15
150
100
-55 to + 100
Min
Typ
Max
Reverse Current
Forward Voltage
Diode Capacitance
Forward Voltage Deviation
I_R
V_R = 10 V
V_R = 2 V
V_F
I_F = 1 mA
I_F = 10 mA
Cd
V_R = 0V, f = 1MHz
V_F
I_F = 10 mA
-
-
10
-
-
0.2
365
-
430
520
-
600
-
-
1.0
-
-
±5
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Unit
V
mA
mW
°C
°C
Unit
µA
µA
mV
mV
pF
mV
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