1SS132 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – HIGH SPEED SWITCHING DIODE

Features
· High switching speed: max. 4 ns
·Continuous reverse voltage:max_{. 50 V}
·Repetitive peak reverse voltage:max. 55 V
· ^{Pb / RoHS Free}
Mechanical Data
· Case: DO-34 Glass Case
· Weight: approx. 0.093g
1SS132
120mA Axial Leaded High Speed Switching Diode
0.55
max
1.6
max
25.4 min
3.04
max
25.4 min
DO-34
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Average Forward Current
Maximum Peak Forward Current
Maximum Power Dissipation
Maximum Non-repetitive Peak Forward Current
Maximum Junction Temperature
Storage Temperature Range
Parameter
Reverse Current
Forward Voltage
Capacitance between terminals
Reverse Recovery Time
Symbol
I_R
V_F
C_T
Trr
Symbol
V_RRM
V_RM
I_F
I_FM
P_D
I_FSM
T_J
T_S
Test Condition
V_R = 50 V
I_F = 100 mA
f = 1MHz ; V_R = 0.5 V
I_F = 10 mA , V_R = 6 V
R_L = 50 Ω
Value
55
50
120
350
300
500
175
-65 to + 175
Min. Typ. Max.
-
-
0.5
-
-
1.2
-
-
2.0
-
-
4.0
Unit
V
V
mA
mA
mW
mA
°C
°C
Unit
µA
V
pF
ns
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