1SS123 Datasheet, PDF (1/1 Pages) NEC – SILICON SWITCHING DIODE

1SS123
SILICON EPITAXIAL PLANAR DIODE
Features
Low capacitance: Ct = 4.0 pF MAX
High speed switching: trr = 9.0 ns MAX.
Wide applications including switching,
limitter,clipper.
Double diode configuration assures
economical use.
Mechanical Data
! Case: SOD-23, Molded Plastic
A
BC
TOP VIEW
E
D
G
H
K
M
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings _{@ TA = 25°C unless otherwise specified}
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Peak Reverse Voltage
Average Rectified Current
DC Forward Current
Junction Temperature
Storage Temperature Range
Junction to Ambient*
Junction to Ambient
Symbol
VRM
VR
IFM
IO
IF
Tj
Tstg
R
R
Rating
70
70
200
100
100
150
-55 to+ 150
1.0
0.67
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Parameter
Continuous reverse voltage
Reverse current
Capacitance
Reverse recovery time
Forward recovery voltage
Symbol
Test Conditions
Min
Typ
IF = 1.0 mA
600
IF = 10 mA
750
VF
IF = 50 mA
855
IF = 100 mA
900
IR
VR = 70 V
Ct
VR = 0, f = 1.0 MHz
2.5
trr
IF = 100 mA,VR = 1 V,RL = 100
Vf r
IF = 100 mA
Unit
V
V
mA
mA
mA
/mW
/mW
Max
Unit
715
855
mV
1100
1300
1.0
A
4.0
pF
9.0
ns
1.75
V
1 of 1
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