1SS110 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for Tuner Band Switch

1SS110
SILICON EPITAXIAL PLANAR DIODES
Features
! ^{Low forward resistance. (r}f ^{= 0.9 Ωmax)}
! Suitable for 5mm pitch high
speed automatical insertion.
! Small glass package (MHD) enables easy
mounting and high reliability.
Mechanical Data
! Case: DO-35, glass case
! _{Polarity: Color band denotes cathode}
! Weight: 0.004 ounces, 0.13 grams
DO-35(GLASS)
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.165 (4.2)
MAX
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
Dimensions in millimeters
Maximum Ratings ^TA ^{= 25°C unless otherwise specified}
Item
Reverse voltage
Forward current
Junction temperature
Storage temperature
Symbol
V_R
I_F
Tj
Tstg
Value
35
100
175
–65 to +175
Unit
V
mA
°C
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Item
Forward voltage
Reverse voltage
Reverse current
Capacitance
Forward resistance
Symbol
V_F
V_R
I_R
C
r_f
Min
—
35
—
—
—
Typ
—
—
—
—
—
Max
1.0
—
0.1
1.2
0.9
Unit
V
V
µA
pF
Ω
Test Condition
I_F = 10mA
I_R = 10µA
V_R = 25V
V_R = 6V, f = 1MHz
I_F = 2mA, f = 100MHz