1SS108 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

1SS108
SILICON SCHOTTKY BARRIER DIODE
Features
! Detection efficiency is very good.
! Small temperature coefficient.
! ^{High reliability with glass seal.}
Mechanical Data
! Case: DO-35, glass case
! Polarity: Color band denotes cathode
! Weight: 0.004 ounces, 0.13 grams
DO-35(GLASS)
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.165 (4.2)
MAX
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
Dimensions in millimeters
Maximum Ratings ^TA ^{= 25°C unless otherwise specified}
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Symbol
V_R
I_O
Tj
Tstg
Value
30
15
125
–55 to +125
Unit
V
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Forward current
Reverse current
Capacitance
Rectifier efficiency
Symbol Min Typ
I_F
3.0
—
I_R
—
—
C
—
—
η
70
—
ESD-Capability
—
70
—
Note: Failure criterion; I_R ≥ 200µA at V_R = 10V
Max
—
100
3.0
—
—
Unit
mA
µA
pF
%
V
Test Condition
V_F = 1V
V_R = 10V
V_R = 1V, f = 1MHz
Vin = 2Vrms, f = 40MHz, R_L = 5kΩ, C_L
= 20pF
*C = 200pF, Both forward and
reverse direction 1 pulse.
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