1SS106 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

1SS106
SCHOTTKY BARRIER RECTIFIER DIODES
Features
! _{Detection efficiency is very good.}
! _{Small temperature coefficient.}
! High reliability with glass seal.
Mechanical Data
! Case: DO-35, glass case
! Polarity: Color band denotes cathode
! Weight: 0.004 ounces, 0.13 grams
DO-35(GLASS)
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.165 (4.2)
MAX
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
Maximum Ratings ^TA ^{= 25°C unless otherwise specified}
Parameter
Reverse Voltage
Average Forward Current
Junction Temperature
Storage Temperature Range
Symbol
V_R
I_O
T_J
T_stg
Value
10
30
125
- 55 to + 125
Electrical Characteristics at T_a = 25 ^OC
Parameter
Symbol
Min.
Forward Current
at V_F = 1 V
I_F
4.5
Reverse Current
at V_R = 6 V
I_R
-
Capacitance
at V_R = 1 V, f = 1 MHz
C
-
Rectifier Efficiency
at V_in = 2 Vrms, f = 40 MHz, R_L = 5 KΩ, C_L = 20 pF
η
70
ESD Capability ¹⁾
-
100
at C = 200 pF, both forward and reverse direction 1 pulse.
1) _{Failure criterion: IR ≥ 140 µA at VR = 6 V}
Max.
-
70
1.5
-
-
Unit
V
mA
O_C
O_C
Unit
mA
µA
pF
%
V