1S1885 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

1S1885 - 1S1888
PLASTIC SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100 - 600V
CURRENT: 1.0 A
Features
! Low cost
! Diffused juncton
! Low leakage
! Low forward voltage drop
! High current capability
! _{Easily cleaned with Freon,Alcohol,Isopropanol}
and similar solvents
! The plastic material carries U/L recognition 94V-0
Mechanical Data
! Case:JEDEC DO--15,molded plastic
! _{Terminals: Axial lead ,solderable per}
MIL- STD-202,Method 208
! Polarity: Color band denotes cathode
! _{Weight: 0.014 ounces,0.39 grams}
! _{Mounting position: Any}
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics _{TA = 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T_J=125
Maximum instantaneous forw ard voltage
@ 1.5 A
Symbol
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
V_F
1S1885
100
70
100
1S1886
200
140
200
1.0
60.0
1.2
1S1887
400
280
400
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note1)
C_J
Typical thermal resistance (Note2)
Operating junction temperature range
R_θJA
T_J
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
5.0
50.0
20
40
- 55---- + 150
- 55 ---- + 150
1S1888
600
420
600
Unit
V
V
V
A
A
V
A
pF
/W
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