1S1834 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – HIGH SPEED RECTIFIER APPLICATIONS.(FAST RECOVERY)

1S1834 - 1S1835
FAST RECOVERY RECTIFIER DIODES
VOLTAGE RANGE: 400 - 600V
CURRENT: 1.0 A
Features
! Low forward voltage drop
! High current capability
! _{Easily cleaned with Freon,Alcohol,Isopropanol}
and similar solvents
! The plastic material carries U/L recognition 94V-0
Mechanical Data
! Case : DO-15 Molded plastic
! Epoxy : UL94V-O rate flame retardant
! ^{Lead : Axial lead solderable per MIL-STD-202,}
Method 208 guaranteed
! Polarity : Color band denotes cathode end
! Mounting position : Any
! ^{Weight : 0.465 gram}
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM
V_RMS
V_DC
I_F(AV)
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.5 A
I_FSM
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
1S1834
400
280
400
1S1835
600
420
600
1.0
60.0
1.2
10.0
100.0
350
12
55
-55-----+150
-55-----+150
Unit
V
V
V
A
A
V
A
ns
pF
̼ͤ
1 of 2
www.sunmate.tw