1S1830 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – RECTIFIER (GENERAL PURPOSE RECTIFIER APPLICATIONS)

VOLTAGE RANGE: 1000V
CURRENT: 1.0 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: D O - 1 5
! ^{Terminals: Plated Leads Solderable per}
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.40 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
1S1830
AXIAL LEADED SILICON RECTIFIER DIODES
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum Recurrent Peak Reverse Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 50 °C
Peak Forward Surge Current, 8.3ms Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.5 Amps.
Repetitive Peak Reverse
Current
Storage Temperature Range
Tj = 150 °C
Junction Temperature Range
Thermal Resistance (Junction to Ambient) DC
SYMBOL
VRRM
IF(AV)
IFSM
VF
I_RRM(1)
IRRM(2)
Tstg
TJ
Rth(j-a)
1S1830
1000
1.0
45
1.2
10
400
- 40 to + 150
- 40 to + 150
100
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
UNIT
V
A
A
V
µA
µA
C
°C
°C/W
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