1N914WS Datasheet, PDF (1/1 Pages) Continental Device India Limited – SILICON EPITAXIAL SWITCHING DIODE

1N914WS
SURFACE MOUNT FAST SWITCHING DIODE
VOLTAGE RANGE: 100V
CURRENT: 200m A
Features
! Silicon Epitaxial Planar Diode
! _{For general purpose and switching.}
Mechanical Data
! Case: SOD-323, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.004 grams (approx.)
! Marking: A3
A
SOD-323
C
Dim Min
Max
D
A
2.30 2.70
B
B
1.75 1.95
C
1.15 1.35
E
D
0.25 0.35
G
E
0.05 0.15
G
0.70 0.95
H
0.30
—
All Dimensions in mm
H
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
DESCRIPTION
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Non Repetitive Peak Forward Surge Current
Pulse width=1s
SYMBOL
V_RRM
I_{F (AV)}
I_FSM
Pulse width=1µs
Power Dissipation
P_tot
Junction Temperature
T_j
Storage Temperature Range
T_stg
VALUE
100
200
0.5
1.0
200
150
- 55 to +150
Electrical Characteristics
DESCRIPTION
Breakdown Voltage
Forward Voltage
Reverse Current
TA = 25°C unless otherwise specified
SYMBOL
V_R
V_F
I_R
TEST CONDITION
I_R=5µA
I_R=100µA
I_F=10mA
V_R=20V
V_R=20V, T_j=150ºC
V_R=75V
DYNAMIC CHARACTERISTICS
Capacitance
Reverse Recovery Time
C_tot
V_R=0V, f=1MHz
t_rr
I_F= I_R=30mA, R_L=100Ω,
I_RR=3.0mA
MIN
MAX
75
100
1.0
25
50
5.0
4.0
50
UNIT
V
mA
A
A
mW
ºC
ºC
UNIT
V
V
V
nA
µA
µA
pF
ns