1N914 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

1N914/A/B
75mA Axial Leaded High Speed Switching Diodes
Features
· _{High switching speed: max. 4 ns}
· _{Continuous reverse voltage:max. 75 V}
· _{Repetitive peak reverse voltage:max. 100 V}
· _{Repetitive peak forward current: max. 225 mA}
Mechanical Data
· ^{Case: DO-35 Glass Case}
· Weight: approx. 0.13g
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Power Dissipation
Maximum Repetitive Peak Forward Current
Maximum Non-repetitive Peak Forward Current at t = 1s
Maximum Junction Temperature
Storage Temperature Range
Parameter
Symbol
Reverse Current
I_R
Forward Voltage
Diode Capacitance
1N914
1N914A
1N914B
V_F
1N914B
Cd
Reverse Recovery Time
Trr
Symbol
V_RRM
V_RM
I_F
P_D
I_FRM
I_FSM
T_J
T_S
Test Condition
V_R = 20 V
V_R = 20 V , Tj = 150 °C
I_F = 10 mA
I_F = 20 mA
I_F = 5 mA
I_F = 100 mA
f = 1MHz ; V_R = 0
I_F = 10 mA to I_R = 60 mA
R_L = 100 Ω ; measured
at I_R = 1mA
Value
100
75
75
250
225
0.5
175
-65 to + 200
Min
Typ
Max
-
-
25
-
-
50
-
-
1.0
-
-
1.0
0.62
-
0.72
-
-
1.0
-
-
4.0
-
-
4
Unit
V
V
mA
mW
mA
A
°C
°C
Unit
nA
μA
V
V
V
V
pF
ns
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